PM001MNEB

PM001MNEB

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Detail Produk

Tabel parameter

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Produk Terkait

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PM001 is a 1M Bit/128K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.

Fitur

Kepadatan
1M Bit/128K Byte
Antarmuka SPI cepat dengan pengalamatan lebar data 8-bit
Frekuensi clock hingga 54MHz @SPI SDR
Mendukung Mode SPI0 dan Mode SPI3
Tegangan operasi
Tegangan Khas: 3.3V
Perlindungan data
Mode proteksi dengan WP#EN, TBSEL, BP0, BP1, BP2 dalam register mode SR#1
Konsumsi daya
Arus tidur 10μA (Nilai tipikal)
Arus siaga 100μA (Nilai tipikal)
Arus aktif 12mA (Nilai tipikal @SPI 54MHz)

Spesifikasi pesanan

PartNo	Kepadatan	Operating voltagerange	Paket	Devicesper bag/reel	Maximum Program/Erase Cycles	Suhu pengoperasian	Dataretention
PM001MNEB	1Mbit	2.7V ~ 3.6V	SOP8	2500 pcs / reel	1E10	-40℃~125℃	≥10 tahun @ 105 ℃
PM001MNIB				2500 pcs / reel		-40℃~85℃	≥10 tahun @ 85 ℃

Paket

Tidak.	Simbol	SignalType	Pin Description
1	CE#	Masukan	Chip Select Enable Signal
2	SO	Keluaran	Serial Output
3	WP#	Masukan	Write Protect
4	VSS	Tanah	Tanah
5	SI	Masukan	SerialInput
6	CLK	Masukan	SerialClock
7	HOLD#	Masukan	Hold
8	VCC	Daya	Daya

Registers	Databitdefinition								Catatan
	7	6	5	4	3	2	1	0
SR#1	WP#EN	RFU0	TBSEL	BP2	BP1	BP0	WREN	LOAD_BUSY	PartR，PartRW
SR#2	SRLK	RFU2	RFU1	DC4	DC 3	DC2	DC1	DC0	RW

WREN(SR#1)	WP#EN(SR#1)	WP#(Pin)	SRregister	Protected Area	Unprotected Area
0	X	X	Protectedstatus	Protected status	Protected status
1	0	X	Non-protected status	Protected status	Non-protected status
1	1	Rendah	Protectedstatus	Protected status	Non-protected status
1	1	Tinggi	Non-protected status	Protected status	Non-protected status

TBSEL=0
BP2	BP1	BP0	1Mb(2blocks)
0	0	0	Noprotectedareas
0	0	1
0	1	0
0	1	1
1	0	0
1	0	1
1	1	0
1	1	1	1blockprotected, addressrange(0x10000 – 0x1FFFF)
TBSEL=1
BP2	BP1	BP0	1Mb(2blocks)
0	0	0	Noprotectedareas
0	0	1	1blockprotected, addressrange(0x00000 – 0xFFFF)
0	1	0	2blocksprotected, addressrange(0x00000 – 0x1FFFF)
0	1	1
1	0	0
1	0	1
1	1	0
1	1	1

{DC4，DC0}	Dummyquantity	Frequencyrangeofrapid readingoperation(MHz)	Catatan
00h	0	0~40	Power- ondefault
01h	1	0~40	–
02h	2	0~40	–
03h	3	0~40	–
04h	4	0~40	–
05h	5	0~40	–
06h	6	0~40	–
07h	7	0~40
08h~1Fh	8~31	0~54	–

Command	SPImode
	Byte1	Byte2	Byte3	Byte4	Byte5	Byte6	Byte7~
Numberofclocks	8	8	8	8	8or configurable	8	8
SR#1registerwrite	01h	S7-S0
SR#1registerread	05h	S7-S0
SR#2registerwrite	87h	S7-S0
SR#2registerread	35h	S7-S0
write	02h	A23-A16	A16-A8	A7-A0	D7-D0	D7-D0	D7-D0
Normalread	03h	A23-A16	A16-A8	A7-A0	D7-D0	D7-D0	D7-D0
Quickread	0Bh	A23-A16	A16-A8	A7-A0	Dummy (Quantity configurable)	D7-D0	D7-D0
Writeenable	06h

Writedisable	04h
Entersleepmode	B9h
Exitsleepmode	ABh
ReadUniqueID	4Bh	ID87~ID0
ReadMANUID	9Fh	ID7~ID0
ReadDeviceID	90h	ID7~ID0
Resetenable	66h
Reset	99h

	STT-MRAM 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23				24
CE# CLK SI SO	Mode3 0 1 2 3 4 5 6 7 Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Mode0 Command(66h) Command(99h)
				Mode0

	Invalid	0	1 Inva tRST	lid

CE# CLK SI	1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Mode3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode3 Mode0 Mode0 Command(01h) Register Data(8bit) Invalid 0 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0 Invalid
SO

0 0 0 0 0 0 0 1	7 6 5 4 3 2 1 0
	7


	Invalid

	STT-MRA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20	M
CE# CLK SI SO

DeviceID value	DeviceIDExplanation
	7-5（3bit）	4-0（5bit）
	Productgrade	Productcapacity
29h	001（A）	01001（4Mb）
49h	010（B）	01001（4Mb）
69h	011（C）	01001（4Mb）
28h	001（A）	01000（2Mb）
48h	010（B）	01000（2Mb）
68h	011（C）	01000（2Mb）
27h	001（A）	00111（1Mb）
47h	010（B）	00111（1Mb）
67h	011（C）	00111（1Mb）

erio CE# CLK SI SO	doftime(tESLP), thechipwillenterthismode. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 tESLP Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Command(B9h) Invalid 1 0 1 1 1 0 0 1 Invalid High-Z			6 0 7 1 dataout 2
		tESLP Mode3

			Mode0

		Invalid

tCH

tCLK

CLK	1 2 3 4 5 6 7 8 9 10 11 12 13 14 tCLK tCH tCL


CE# SI SO				6 0 7 1

		tCHD	tCHD

	1 2 3 4 5 6 7 8 9 10 11 12 13 S 1T4	T	-MRAM 6 0 7 1
CLK CE# HOLD# SO

	Test bol Parameter Value Unit Conditions C Powersupplyvoltage -0.5~4 V N Anypinvoltage -0.5~(VCC+0.5) V T Eachpinoutputcurrent ±20 mA
Sym	bol	Parameter	Kondisi Pengujian	Nilai	Unit
VC	C	Powersupplyvoltage		-0.5~4	V
VI	N	Anypinvoltage		-0,5 ~ (VCC + 0,5)	V
IOU	T	Eachpinoutputcurrent		±20	mA
TBIAS
		Temperatureunder biaspressure	Kelas industri	-40~125	℃
Tstg		Storagetemperature		-55~150	℃
Hmax_write		Maximum magneticfield	Menulis	4, 000	A/m

	duringwriting
Hmax_read	Maximummagnetic fieldduringreading orstandbymode	Readingor standby	12, 000	A/m
Hmax_poweroff	Maximummagnetic fieldduringpower off	Poweroff	40, 000	A/m

Simbol	Parameter	Min	Max	Unit
VCC	Powersupplyvoltage	2.7	3.6	V
TA	Temperature(industrial)	-40	125	℃

Symb ol	Parameter	Kondisi Pengujian	Min	Ketik.	Max	Unit
\|ILIAS.	Inputleakage current	0≤ CE# ＜ VCC	–	–	140	μA
		CE#=VCC	–	–	1	μA
		WP#, HOLD#, CLK, SI=0V~VCC	–	–	1	μA
\|ILO	Outputleakage current	SO=0V~VCC	–	–	1	μA

ISLP	Sleepcurrent	CE#=VCC AllinputsVSSorVCC		–	10	145	μA
I SBY	Standbycurrent	CLK=SI=CE#=VCC		–	100	5600	μA
ICC	Arus operasi	SPIWrite	CLK=1MHz	–	9	16	mA
			CLK=40MHz	–	11	18	mA
			CLK=54MHz	–	12	19	mA
		SPIRead	CLK=1MHz	–	5	13	mA
			CLK=40MHz	–	7	15	mA
			CLK=54MHz	–	8	16	mA
VIL	Inputlowlevel	VCC = 2.7V ~ 3.6V		-0.3	–	0.8	V
VIH	Inputhighlevel	VCC = 2.7V ~ 3.6V		VCC-0.4	–	VCC + 0,3	V
VOL	Outputlowlevel	IOL=3.1mA		–	–	0.2VCC	V
VOH	Outputhighlevel	IOH=-3.1mA		0.8VCC	–	–	V

Simbol	Parameter	Ketik.	Max	Unit
CP	Externalcapacitorsfor VCC/VSSpowersupply	–	10	μF
CIN	Controlinputcapacitor	–	8	рF
CIO	IOcapacitor	–	12	рF
CLOAD	Loadcapacitance	–	32	рF

Parameter	Nilai	Unit
Powersupplyvoltagerange	2.7~3.6	V
Temperaturerange(industrial)	-40~125	℃
Inputinterfacevoltagerange	VCC-0.4 ≤ VIH ≤ VCC+0.3 0 ≤ VIL ≤ 0.8	V
Risingedgetimeofinputinterface	2	ns
Descendingedgetimeofinput interface	2	ns
Inputinterfacejudgethelevelof theadoptedvoltagevalue	VCC/2	V
Inputinterfacejudgethelevelof theadoptedvoltagevalue	VCC/2	V

Simbol	Parameter	Min	Max	Unit
fCLK	CLK Clockfrequency	0	54	MHz
tCH / tCL	Clockhigh/lowleveltime	9	–	ns
tCPH	Minimumhigh-leveltimebetweeneach instructionswitchofCE#	150	–	ns
tCSP	SetuptimeofCE#attherisingedgeofthe clock	10	–	ns
tCHD	CE#holdtimestartingfromtherisingedgeof theclock	10	–	ns
tSP	Inputdatasetuptimeontherisingedgeofthe clock	2	–	ns
tHD	Inputdataholdtimefromtherisingedgeof theclock	5	–	ns
tHZ	Theswitchingtimewhentheoutputdata becomesinvalid	3	6	ns

tACLK	Outputdatabecomesvalidswitchingtime	–	9	ns
tKOH	Outputdataholdtime	4	–	ns
tRST	Resetrecovery(normalreadingandwriting) time	500	–	μs
tESLP	Timefromenteringsleepmodecommandto enteringsleepmode	–	10	μs
tRSLP	Timefromexitingsleepmodetoentering standbymode	500	–	kami
tSH	HOLD#setuptime	10	–	ns
tHH	HOLD#holdtime	10	–	ns
tHHZ	HOLD#ispulledlowtooutputHi-Ztime	–	20	ns
tHLZ	HOLD#pulledhightooutputvalidtime	–	20	ns

Simbol	Parameter	Min	Max	Unit
VCI	Poweron Initialvoltage	2.35	–	V
tPU	Powerondelaytime	500	–	μs

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Perusahaan Mikroelektronika, Ltd.

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ired CE# CLK SI SO

forthewake-upprocessist. 1 2 3 4 5R SLP 6 7 8 9 10 11 12 13 14 tRSLP Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Command(ABh) Invalid 1 0 1 0 1 0 1 1 Invalid High-Z

6 0 7 1 dataout 2