PM001MNEB

PM001MNEB

Ürün Katagorileri

Kısa Açıklama:

Ürün Detayı

Parametre tablosu

Bana neye ihtiyacın olduğunu söyle

İlgili Ürünler

Ürün Katagorileri

Kısa Açıklama:

Ürün Detayı

Parametre tablosu

Bana neye ihtiyacın olduğunu söyle

İlgili Ürünler

Bana neye ihtiyacın olduğunu söyle

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PM001 is a 1M Bit/128K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.

Özellikler

Yoğunluk
1M Bit/128K Byte
8-bit veri genişliğinde adresleme ile hızlı SPI arayüzü
54MHz'e kadar saat frekansı @SPI SDR
SPI Mod0 ve SPI Mod3 desteği
Çalışma gerilimi
Tipik Voltaj：3,3V
Veri koruma
SR#1 mod kaydında WP#EN, TBSEL, BP0, BP1, BP2 ile koruma modu
Güç tüketimi
Uyku akımı 10μA (Tipik değer)
Bekleme akımı 100μA (Tipik değer)
Aktif akım 12mA (Tipik değer @SPI 54MHz)

Sipariş özellikleri

PartNo	Yoğunluk	Operating voltagerange	Paket	Devicesper bag/reel	Maximum Program/Erase Cycles	Çalışma sıcaklığı	Dataretention
PM001MNEB	1Mbit	2.7V ~ 3.6V	SOP8	2500 adet/makara	1E10	-40℃~125℃	≥10years@105℃
PM001MNIB				2500 adet/makara		-40℃~85℃	≥10years@85℃

Paket

Hayır.	Sembol	SignalType	Pin Description
1	CE#	Giriş	Chip Select Enable Signal
2	SO	Çıktı	Serial Output
3	WP#	Giriş	Write Protect
4	VSS	Zemin	Zemin
5	SI	Giriş	SerialInput
6	CLK	Giriş	SerialClock
7	HOLD#	Giriş	Hold
8	VCC	Güç	Güç

Registers	Databitdefinition								Note
	7	6	5	4	3	2	1	0
SR#1	WP#EN	RFU0	TBSEL	BP2	BP1	BP0	WREN	LOAD_BUSY	PartR，PartRW
SR#2	SRLK	RFU2	RFU1	DC4	DC 3	DC2	DC1	DC0	RW

WREN(SR#1)	WP#EN(SR#1)	WP#(Pin)	SRregister	Protected Area	Unprotected Area
0	X	X	Protectedstatus	Protected status	Protected status
1	0	X	Non-protected status	Protected status	Non-protected status
1	1	Düşük	Protectedstatus	Protected status	Non-protected status
1	1	Yüksek	Non-protected status	Protected status	Non-protected status

TBSEL=0
BP2	BP1	BP0	1Mb(2blocks)
0	0	0	Noprotectedareas
0	0	1
0	1	0
0	1	1
1	0	0
1	0	1
1	1	0
1	1	1	1blockprotected, addressrange(0x10000 – 0x1FFFF)
TBSEL=1
BP2	BP1	BP0	1Mb(2blocks)
0	0	0	Noprotectedareas
0	0	1	1blockprotected, addressrange(0x00000 – 0xFFFF)
0	1	0	2blocksprotected, addressrange(0x00000 – 0x1FFFF)
0	1	1
1	0	0
1	0	1
1	1	0
1	1	1

{DC4，DC0}	Dummyquantity	Frequencyrangeofrapid readingoperation(MHz)	Note
00h	0	0~40	Power- ondefault
01h	1	0~40	–
02h	2	0~40	–
03h	3	0~40	–
04h	4	0~40	–
05h	5	0~40	–
06h	6	0~40	–
07h	7	0~40
08h~1Fh	8~31	0~54	–

Command	SPImode
	Byte1	Byte2	Byte3	Byte4	Byte5	Byte6	Byte7~
Numberofclocks	8	8	8	8	8or configurable	8	8
SR#1registerwrite	01h	S7-S0
SR#1registerread	05h	S7-S0
SR#2registerwrite	87h	S7-S0
SR#2registerread	35h	S7-S0
write	02h	A23-A16	A16-A8	A7-A0	D7-D0	D7-D0	D7-D0
Normalread	03h	A23-A16	A16-A8	A7-A0	D7-D0	D7-D0	D7-D0
Quickread	0Bh	A23-A16	A16-A8	A7-A0	Dummy (Quantity configurable)	D7-D0	D7-D0
Writeenable	06h

Writedisable	04h
Entersleepmode	B9h
Exitsleepmode	ABh
ReadUniqueID	4Bh	ID87~ID0
ReadMANUID	9Fh	ID7~ID0
ReadDeviceID	90h	ID7~ID0
Resetenable	66h
Reset	99h

	STT-MRAM 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23				24
CE# CLK SI SO	Mode3 0 1 2 3 4 5 6 7 Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Mode0 Command(66h) Command(99h)
				Mode0

	Invalid	0	1 Inva tRST	lid

CE# CLK SI	1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Mode3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode3 Mode0 Mode0 Command(01h) Register Data(8bit) Invalid 0 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0 Invalid
SO

0 0 0 0 0 0 0 1	7 6 5 4 3 2 1 0
	7


	Invalid

	STT-MRA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20	M
CE# CLK SI SO

DeviceID value	DeviceIDExplanation
	7-5（3bit）	4-0（5bit）
	Productgrade	Productcapacity
29h	001（A）	01001（4Mb）
49h	010（B）	01001（4Mb）
69h	011（C）	01001（4Mb）
28h	001（A）	01000（2Mb）
48h	010（B）	01000（2Mb）
68h	011（C）	01000（2Mb）
27h	001（A）	00111（1Mb）
47h	010（B）	00111（1Mb）
67h	011（C）	00111（1Mb）

erio CE# CLK SI SO	doftime(tESLP), thechipwillenterthismode. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 tESLP Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Command(B9h) Invalid 1 0 1 1 1 0 0 1 Invalid High-Z			6 0 7 1 dataout 2
		tESLP Mode3

			Mode0

		Invalid

tCH

tCLK

CLK	1 2 3 4 5 6 7 8 9 10 11 12 13 14 tCLK tCH tCL


CE# SI SO				6 0 7 1

		tCHD	tCHD

	1 2 3 4 5 6 7 8 9 10 11 12 13 S 1T4	T	-MRAM 6 0 7 1
CLK CE# HOLD# SO

	Test bol Parameter Value Unit Conditions C Powersupplyvoltage -0.5~4 V N Anypinvoltage -0.5~(VCC+0.5) V T Eachpinoutputcurrent ±20 mA
Sym	bol	Parametre	Test Koşulları	Değer	Birim
VC	C	Powersupplyvoltage		-0.5~4	V
VI	N	Anypinvoltage		-0,5~(VCC+0,5)	V
IOU	T	Eachpinoutputcurrent		±20	mA
TBIAS
		Temperatureunder biaspressure	Endüstriyel sınıf	-40~125	℃
Tstg		Storagetemperature		-55~150	℃
Hmax_write		Maximum magneticfield	Yazmak	4, 000	A/m

	duringwriting
Hmax_read	Maximummagnetic fieldduringreading orstandbymode	Readingor standby	12, 000	A/m
Hmax_poweroff	Maximummagnetic fieldduringpower off	Poweroff	40, 000	A/m

Sembol	Parametre	Min	Maksimum	Birim
VCC	Powersupplyvoltage	2.7	3.6	V
TA	Temperature(industrial)	-40	125	℃

Symb ol	Parametre	Test Koşulları	Min	Tip.	Maksimum	Birim
\|ILI\|	Inputleakage current	0≤ CE# ＜VCC	–	–	140	μA
		CE#=VCC	–	–	1	μA
		WP#, HOLD#, CLK, SI=0V~VCC	–	–	1	μA
\|ILO\|	Outputleakage current	SO=0V~VCC	–	–	1	μA

ISLP	Sleepcurrent	CE#=VCC AllinputsVSSorVCC		–	10	145	μA
I SBY	Standbycurrent	CLK=SI=CE#=VCC		–	100	5600	μA
ICC	Çalışma akımı	SPIWrite	CLK=1MHz	–	9	16	mA
			CLK=40MHz	–	11	18	mA
			CLK=54MHz	–	12	19	mA
		SPIRead	CLK=1MHz	–	5	13	mA
			CLK=40MHz	–	7	15	mA
			CLK=54MHz	–	8	16	mA
VIL	Inputlowlevel	VCC=2.7V~3.6V		-0.3	–	0.8	V
VIH	Inputhighlevel	VCC=2.7V~3.6V		VCC-0.4	–	VCC+0,3	V
VOL	Outputlowlevel	IOL=3.1mA		–	–	0,2VCC	V
VOH	Outputhighlevel	IOH=-3.1mA		0,8VCC	–	–	V

Sembol	Parametre	Tip.	Maksimum	Birim
CP	Externalcapacitorsfor VCC/VSSpowersupply	–	10	μF
CIN	Controlinputcapacitor	–	8	рF
CIO	IOcapacitor	–	12	рF
YÜKLE	Loadcapacitance	–	32	рF

Parametre	Değer	Birim
Powersupplyvoltagerange	2.7~3.6	V
Temperaturerange(industrial)	-40~125	℃
Inputinterfacevoltagerange	VCC-0.4 ≤ VIH ≤ VCC+0.3 0 ≤ VIL ≤ 0.8	V
Risingedgetimeofinputinterface	2	ns
Descendingedgetimeofinput interface	2	ns
Inputinterfacejudgethelevelof theadoptedvoltagevalue	VCC/2	V
Inputinterfacejudgethelevelof theadoptedvoltagevalue	VCC/2	V

Sembol	Parametre	Min	Maksimum	Birim
fCLK	CLK Clockfrequency	0	54	MHz
tCH/tCL	Clockhigh/lowleveltime	9	–	ns
tCPH	Minimumhigh-leveltimebetweeneach instructionswitchofCE#	150	–	ns
tCSP	SetuptimeofCE#attherisingedgeofthe clock	10	–	ns
tCHD	CE#holdtimestartingfromtherisingedgeof theclock	10	–	ns
tSP	Inputdatasetuptimeontherisingedgeofthe clock	2	–	ns
tHD	Inputdataholdtimefromtherisingedgeof theclock	5	–	ns
tHZ	Theswitchingtimewhentheoutputdata becomesinvalid	3	6	ns

tACLK	Outputdatabecomesvalidswitchingtime	–	9	ns
tKOH	Outputdataholdtime	4	–	ns
tRST	Resetrecovery(normalreadingandwriting) time	500	–	μs
tESLP	Timefromenteringsleepmodecommandto enteringsleepmode	–	10	μs
tRSLP	Timefromexitingsleepmodetoentering standbymode	500	–	Biz
tSH	HOLD#setuptime	10	–	ns
tHH	HOLD#holdtime	10	–	ns
tHHZ	HOLD#ispulledlowtooutputHi-Ztime	–	20	ns
tHLZ	HOLD#pulledhightooutputvalidtime	–	20	ns

Sembol	Parametre	Min	Maksimum	Birim
VCI	Poweron Initialvoltage	2.35	–	V
tPU	Powerondelaytime	500	–	μs

Shanghai Siproin

Microelectronics Co., Ltd.

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ired CE# CLK SI SO

forthewake-upprocessist. 1 2 3 4 5R SLP 6 7 8 9 10 11 12 13 14 tRSLP Mode3 0 1 2 3 4 5 6 7 Mode3 Mode0 Mode0 Command(ABh) Invalid 1 0 1 0 1 0 1 1 Invalid High-Z

6 0 7 1 dataout 2