Features
| Applications
|
Blog
Features
| Applications
|
| Item | Max | Unit |
| Vin, EN, SW Voltage | -0.3～ 32 | V |
| Lead Soldering, Temperature (10s) | +260 | °C |
| Operating junction temperature | -40～+150 | °C |
| Power dissipation(3) | Internal restrictions | |
| FB, BS voltage | -0.3~6 | V |
| Storage temperature | -55～+150 | °C |
| ESD (Human Body Mode, HMB） | 2 | kV |
| Thermal Resistance(RθJC) | 55 | °C/W |
| Thermal Resistance(RθJA) | 105 | °C/W |
Note (1): Exceeding these ratings may damage the device.
Note (2): The device is not guaranteed to function outside of its operating conditions.
Note (3): The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, RθJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD (MAX) = (TJ(MAX) − TA)/RθJA. Exceeding the maximum allowable power dissipation causes excessive die temperature, and the regulator goes into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=160°C (typical) and disengages at TJ= 140°C (typical).
VIN=12V, Ta=25°C, unless otherwise specified
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Input Voltage Range | 4.5 | — | 28 | V | |
| Supply Current (Quiescent) | VEN=3.0V | — | 0.3 | 0.8 | mA |
| Supply Current (Shutdown) | VEN =0 or EN=GND | — | — | 25 | uA |
| Feedback Voltage | 0.585 | 0.600 | 0.615 | V | |
| High-Side Switch On-Resistance | ISW=100mA | — | 100 | — | mΩ |
| Low-Side Switch On-Resistance | ISW=-100mA | — | 50 | — | mΩ |
| Valley Switch Current Limit | 3.5 | — | — | A | |
| Over Voltage Protection Threshold | — | 28.5 | — | V | |
| Switching Frequency | — | 500 | — | KHz | |
| Maximum Duty Cycle | Vin=12V, Vfb=0.5V | — | 92 | — | % |
| Minimum Off-Time | Vin=28V,Vout=1.0V, Iout=1.0A | — | 105 | — | nS |
| EN Rising Threshold | 1.4 | — | — | V | |
| EN Falling Threshold | — | — | 0.5 | V | |
| Under-Voltage Lockout Threshold | Wake up VIN Voltage | — | 3.8 | 4.2 | V |
| Shutdown VIN Voltage | 3.0 | 3.4 | — | V | |
| Hysteresis VIN voltage | — | 400 | — | mV | |
| Soft Start | — | 1.5 | — | ms | |
| Thermal Shutdown | — | 160 | — | ℃ | |
| Thermal Hysteresis | — | 20 | — | ℃ |
Note (1): MOSFET on-resistance specifications are guaranteed by correlation to wafer level measurements.
Note (2): Thermal shutdown specifications are guaranteed by correlation to the design and characteristics analysis.
Shanghai Siproin
Microelectronics Co.,Ltd.
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