NVM

PM002 is a 2M Bit/256K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM  (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a  retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO(Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.
PM001 is a 1M Bit/128K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.
A novel non-volatile magnetic memory MRAM is an ideal device for non-volatile cache and main memory. The application prospect is not limited to the traditional computer storage system, but also can be extended to many other fields, and is even expected to become a general memory. MRAM ensures that data will not be lost in the case of power failure and can prevent data damage caused by rays. In emerging applications such as the Internet of Things and big data, ubiquitous sensor terminals need to collect massive data. In order to save storage power, MRAM has become a popular candidate for its relatively good performance.
PM004 is a 4M Bit/512K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.
PM004 is a 4M Bit/512K Byte capacity SPI (Serial Single-Wire) interface STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) chip. Its data is non-volatile with a retention time exceeding 10 years. The chip supports independent 1-bit SI (Serial Input) and SO (Serial Output) interfaces, allows continuous writing or reading of data bytes at its maximum clock frequency, and features zero write latency.
The PN256K is a 256K Bit/32K Byte IIC interface non-volatile memory. It adopts advanced PMTJ STT-MRAM technology to achieve read and write transmission of up to 400kHz, with excellent reliability and more than 20 years of data retention time.
PM256K is a 256K Bit/32K Byte SPI interface non-volatile memory. The chip adopts advanced  PMTJ STT-MRAM technology, supports single-line SI and SO independent interfaces, achieves  up to 20MHz read and write transmission, and has no delay in writing. It has excellent  reliability and more than 20 years of data retention time. PM256K is an ideal solution for MCU to expand external memory. At the same time, due to the characteristics of fast throughput, few pins and small size, it has gradually become the choice of  applications such as embedded, network switches, automobiles and the Internet of Things.
A novel non-volatile magnetic memory MRAM is an ideal device for non-volatile cache and main memory. The application prospect is not limited to the traditional computer storage system, but also can be extended to many other fields, and is even expected to become a general memory. MRAM ensures that data will not be lost in the case of power failure and can prevent data damage caused by rays. In emerging applications such as the Internet of Things and big data, ubiquitous sensor terminals need to collect massive data. In order to save storage power, MRAM has become a popular candidate for its relatively good performance.

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