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SSP1220 is a precision 24-bit analog-to-digital converter developed and designed by Siproin Microelectronics. The SSP1220 is capable of performing conversions at sampling data rates up to 2k SPS and is stable within a single cycle. For industrial applications in noisy environments, the digital filter provides both 50Hz and 60Hz rejection at a sampling frequency of 20SPS.
The SSP8011A-A is a low-cost, low-power single-channel capacitive touch sensing IC.Built-in voltage regulator circuit, few peripheral components, only a few components can achieve touch sensing.
Provides 2 output modes, high/low output optional.Reset after a maximum of 9S.The sensitivity of the touch-sensitive keys can be adjusted as needed by adjusting the external resistance and capacitance.
The new SSP9481 is a high-performance 80V, 1A asynchronous buck converter ideal for designing power systems with a wide range of input voltages (4.5V to 80V) to 3.3V outputs and 1A on-load capability. Below, we will elaborate on how to use the SSP9481 chip to complete this design task, including the selection of key parameters, circuit design, component selection and performance optimization.
According to the characteristics of Shanghai Siproin Microelectronics product series , which could be widely used in smart meters involving leakage protection, street light detection, sockets, charging piles, intelligent electrical distribution boxes and other meter-related categories.
The voltage detector is an IC chip that monitor the voltage of power supply line to output a detected signal when the voltage falls below or exceeds the setting voltage,which is also shorted for VD.Siproin provides low-power low-voltage detection chips, which are available in two forms: CMOS output and NMOS open-drain output.
STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) is the second generation of MRAM (magnetic random access memory). Its core advantage lies in the use of spin current technology to achieve efficient information writing. The core component of its storage unit is a finely designed MTJ (magnetic tunnel junction), which consists of two ferromagnetic layers of different thicknesses sandwiched by a non-magnetic isolation layer that is only a few nanometers thick. This unique design makes STT-MRAM an advanced non-volatile memory that performs data writing operations by precisely controlling the spin current.
