{"id":2541,"date":"2024-09-04T17:32:20","date_gmt":"2024-09-04T09:32:20","guid":{"rendered":"https:\/\/www.siproin-ic.com\/?p=2541"},"modified":"2024-09-06T11:27:58","modified_gmt":"2024-09-06T03:27:58","slug":"stt-mram-non-volatile-magnetic-random-access-memory","status":"publish","type":"post","link":"https:\/\/www.siproin-ic.com\/tr\/stt-mram-non-volatile-magnetic-random-access-memory\/","title":{"rendered":"STT-MRAM U\u00e7ucu olmayan manyetik rastgele eri\u015fimli bellek"},"content":{"rendered":"

STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) ikinci nesil MRAM'dir (manyetik rastgele eri\u015fimli bellek). Temel avantaj\u0131, verimli bilgi yaz\u0131m\u0131 elde etmek i\u00e7in spin ak\u0131m\u0131 teknolojisinin kullan\u0131lmas\u0131nda yatmaktad\u0131r. Depolama biriminin temel bile\u015feni, sadece birka\u00e7 nanometre kal\u0131nl\u0131\u011f\u0131nda manyetik olmayan bir izolasyon katman\u0131 ile sandvi\u00e7lenmi\u015f farkl\u0131 kal\u0131nl\u0131klarda iki ferromanyetik katmandan olu\u015fan ince tasarlanm\u0131\u015f bir MTJ'dir (manyetik t\u00fcnel ba\u011flant\u0131s\u0131). Bu benzersiz tasar\u0131m, STT-MRAM'i spin ak\u0131m\u0131n\u0131 hassas bir \u015fekilde kontrol ederek veri yazma i\u015flemlerini ger\u00e7ekle\u015ftiren geli\u015fmi\u015f bir u\u00e7ucu olmayan bellek haline getirmektedir.<\/span><\/p>\n

 <\/p>\n

STT-MRAM'in \u00c7al\u0131\u015fma Prensibi<\/strong><\/span><\/p>\n

Depolama birimi bir transist\u00f6r, bir manyetik t\u00fcnel ba\u011flant\u0131s\u0131 (MTJ) ve bir ba\u011flant\u0131 hatt\u0131ndan olu\u015fmaktad\u0131r. MTJ, sabit bir katman (g\u00fc\u00e7l\u00fc manyetizma), manyetik olmayan bir izolasyon katman\u0131 ve serbest katman\u0131n manyetik momentinin kolayca tersine \u00e7evrilebildi\u011fi serbest bir katman (zay\u0131f manyetizma) ile istiflenir. Transist\u00f6r bir yer se\u00e7im anahtar\u0131 olarak kullan\u0131l\u0131r ve drenaj\u0131 MTJ sabit katman\u0131na ba\u011flan\u0131r. Transist\u00f6r kap\u0131 taraf\u0131ndan etkinle\u015ftirildi\u011finde, kaynak, drenaj, MTJ ve bit hatt\u0131 kapal\u0131 bir devre olu\u015fturur.<\/span><\/p>\n

Bilgi yazarken, bit hatt\u0131 ve ek yazma bilgi hatt\u0131 s\u0131ras\u0131yla yar\u0131 se\u00e7meli yazma manyetik alanlar\u0131 \u00fcretir ve iki manyetik alan ortogonaldir. Yaln\u0131zca depolama h\u00fccresi se\u00e7ildi\u011finde ve ek yazma bilgi hatt\u0131 a\u00e7\u0131ld\u0131\u011f\u0131nda, serbest katman\u0131n manyetik momenti, sabit katman\u0131n manyetik momentine paralel veya anti-paralel olan \u00e7ift manyetik alan taraf\u0131ndan tersine \u00e7evrilir, bu da MTJ direncinde bir de\u011fi\u015fiklikle sonu\u00e7lan\u0131r ve b\u00f6ylece bilgi depolamas\u0131 ger\u00e7ekle\u015ftirilir.<\/span><\/p>\n

Bilgi okunurken, se\u00e7ilen bellek h\u00fccresinden k\u00fc\u00e7\u00fck bir ak\u0131m ge\u00e7erek MTJ boyunca diren\u00e7 durumunu yans\u0131tan bir potansiyel fark olu\u015fturur. Potansiyel fark\u0131 \u00f6l\u00e7erek, serbest katman ve sabit katman\u0131n manyetik momentlerinin g\u00f6receli y\u00f6n\u00fc tahribats\u0131z olarak belirlenebilir ve b\u00f6ylece depolanan bilgi okunabilir.<\/span><\/p>\n

\"\"<\/span><\/p>\n

\uff08MTJ modundan sonraMRAM s\u00fcre\u00e7 ak\u0131\u015f\u0131\uff09<\/span><\/p>\n

 <\/p>\n

STT-MRAM \u00f6zellikleri<\/strong><\/span><\/p>\n

    \n
  1. Beklenmedik elektrik kesintileri durumunda STT-MRAM'in do\u011fas\u0131nda bulunan u\u00e7ucu olmayan bellek \u00f6zelli\u011fi, m\u00fc\u015fterilerin yedek bir bataryaya ihtiya\u00e7 duymadan verilerini korumalar\u0131na olanak tan\u0131r.<\/span><\/li>\n
  2. STT-MRAM'in h\u0131zl\u0131 okuma\/yazma performans\u0131, sistem okuma\/yazma gecikmesini \u00f6nemli \u00f6l\u00e7\u00fcde azaltarak uygulamalar\u0131n yerinde y\u00fcr\u00fct\u00fclmesini daha verimli hale getirir.STT-MRAM<\/span><\/li>\n
  3. STT-MRAM, y\u00fcksek bant geni\u015fli\u011fi okuma-yazma ve u\u00e7ucu olmayan \u00f6zelliklere sahiptir ve bellek ve \u00e7al\u0131\u015fan belle\u011fin ikili i\u015flevlerini oynayabilir; Yazma gecikmesi yok; Sistemin otomatik olarak kapanmas\u0131n\u0131 ger\u00e7ekle\u015ftirebilir.<\/span><\/li>\n
  4. STT-MRAM bellek, ilk parti sevkiyat\u0131 yap\u0131lan yerli ba\u011f\u0131ms\u0131z bir \u00fcr\u00fcnd\u00fcr.<\/span><\/li>\n
  5. Veri g\u00fcvenli\u011fi \u00f6nemli \u00f6l\u00e7\u00fcde g\u00fc\u00e7lendirilerek, kurcalamaya kar\u015f\u0131 dayan\u0131kl\u0131 uygulamalar\u0131n geli\u015ftirilmesi ve da\u011f\u0131t\u0131lmas\u0131 daha kolay hale getirilmi\u015ftir.<\/span><\/li>\n
  6. SRAM+FLASH+EEPROM ayn\u0131 anda de\u011fi\u015ftirilebilir.<\/span><\/li>\n<\/ol>\n

     <\/p>\n

    STT-MRAM'in ortak bellek ile kar\u015f\u0131la\u015ft\u0131r\u0131lmas\u0131 a\u015fa\u011f\u0131daki gibidir:<\/strong><\/span><\/p>\n

    Tablo 1:<\/span><\/p>\n\n\n\n\n\n\n\n\n\n
    ITEM<\/strong><\/span><\/td>\nSTT-MRAM<\/strong><\/span><\/td>\nFRAM<\/strong><\/span><\/td>\nNVSRAM<\/strong><\/span><\/td>\nTOGGLE-MRAM<\/strong><\/span><\/td>\n<\/tr>\n
    Bellek t\u00fcr\u00fc<\/span><\/td>\nVoltil Olmayan<\/span><\/td>\nVoltil Olmayan<\/span><\/td>\nVoltil Olmayan<\/span><\/td>\nVoltil Olmayan<\/span><\/td>\n<\/tr>\n
    Yazma y\u00f6ntemi<\/span><\/td>\nA\u015f\u0131r\u0131 Yazma<\/span><\/td>\nA\u015f\u0131r\u0131 Yazma<\/span><\/td>\nA\u015f\u0131r\u0131 Yazma<\/span><\/td>\nA\u015f\u0131r\u0131 Yazma<\/span><\/td>\n<\/tr>\n
    Yazma d\u00f6ng\u00fcs\u00fc<\/span><\/td>\n25ns<\/span><\/td>\n150ns<\/span><\/td>\n25ns<\/span><\/td>\n35ns<\/span><\/td>\n<\/tr>\n
    Okuma\/yazma say\u0131s\u0131<\/span><\/td>\n1E+13<\/span><\/td>\n1E+14<\/span><\/td>\n1E+7<\/span><\/td>\n1E+13<\/span><\/td>\n<\/tr>\n
    Veri Yo\u011funlu\u011fu<\/span><\/td>\nY\u00fcksek<\/span><\/td>\nD\u00fc\u015f\u00fck<\/span><\/td>\nD\u00fc\u015f\u00fck<\/span><\/td>\nOrta<\/span><\/td>\n<\/tr>\n
    Saklama s\u00fcresi<\/span><\/td>\n>20 y\u0131ldan fazla<\/span><\/td>\n10 y\u0131l<\/span><\/td>\n20 y\u0131l<\/span><\/td>\n>20 y\u0131ldan fazla<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

    Tablo 2:<\/span><\/p>\n\n\n\n\n\n\n\n\n\n
    ITEM<\/span><\/strong><\/td>\nSTT-MRAM<\/span><\/strong><\/td>\nEEPROM<\/span><\/strong><\/td>\nFLA\u015e<\/span><\/strong><\/td>\nSRAM<\/span><\/strong><\/td>\nFRAM<\/span><\/strong><\/td>\n<\/tr>\n
    Bellek T\u00fcr\u00fc<\/span><\/td>\nVoltil Olmayan\u00a0<\/span><\/span><\/td>\nVoltil Olmayan<\/span><\/td>\nVoltil Olmayan<\/span><\/td>\nVoltile<\/span><\/td>\nVoltil Olmayan\u00a0<\/span><\/span><\/td>\n<\/tr>\n
    Yazma Y\u00f6ntemi<\/span><\/td>\n\u00dczerine Yaz\u00a0<\/span><\/span><\/td>\nSilme+Yazma<\/span><\/td>\nSilme+Yazma<\/span><\/td>\n\u00dczerine Yaz<\/span><\/td>\n\u00dczerine Yaz<\/span><\/td>\n<\/tr>\n
    Yazma \u00c7evrim S\u00fcresi<\/span><\/td>\n25ns\u00a0<\/span><\/span><\/td>\n10\u03bcs<\/span><\/td>\n10\u03bcs<\/span><\/td>\n5ns<\/span><\/td>\n150ns<\/span><\/td>\n<\/tr>\n
    Okuma\/Yazma D\u00f6ng\u00fcs\u00fc<\/span><\/td>\n1E+13<\/span><\/td>\n1E+6<\/span><\/td>\n1E+5<\/span><\/td>\ns\u0131n\u0131rs\u0131z<\/span><\/td>\n1E+14\u00a0<\/span><\/span><\/td>\n<\/tr>\n
    G\u00fc\u00e7lendirici Devresi<\/span><\/td>\nHay\u0131r<\/span><\/td>\nEvet<\/span><\/td>\nEvet<\/span><\/td>\nHay\u0131r<\/span><\/td>\nHay\u0131r<\/span><\/td>\n<\/tr>\n
    Veri Yedekleme Pili<\/span><\/td>\nHay\u0131r<\/span><\/td>\nHay\u0131r<\/span><\/td>\nHay\u0131r<\/span><\/td>\nEvet<\/span><\/td>\nHay\u0131r<\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

     <\/p>\n

    Uygulama<\/strong><\/span><\/p>\n

    Y\u0131k\u0131c\u0131 bir teknoloji olan STT-MRAM, t\u00fcketici elektroni\u011fi ve ki\u015fisel bilgisayarlardan otomotiv, medikal, askeri ve havac\u0131l\u0131k alanlar\u0131na kadar geni\u015f bir yelpazede \u00fcr\u00fcn performans ortam\u0131n\u0131 kademeli olarak yeniden \u015fekillendirmektedir. Bu da yar\u0131 iletken end\u00fcstrisinde yeni bir sayfa a\u00e7\u0131yor ve \u00fcr\u00fcn inovasyon potansiyelini harekete ge\u00e7iriyor.<\/span><\/p>\n

    Otomotiv end\u00fcstrisinde STT-MRAM, \u00fcst\u00fcn okuma h\u0131z\u0131, ultra d\u00fc\u015f\u00fck g\u00fc\u00e7 t\u00fcketimi ve y\u00fcksek yo\u011funlu\u011fu ile eFlash ve eSRAM'in \u00e7ok \u00f6tesine ge\u00e7erek otomotiv zekas\u0131n\u0131 ve y\u00fcksek performans\u0131 te\u015fvik etmede kilit bir g\u00fc\u00e7 haline gelmi\u015ftir. Ta\u015f\u0131nabilir cihazlar ve cep telefonu pazar\u0131 i\u00e7in STT-MRAM, \u00e7oklu \u00e7ip paketlerinin (MCP) ortadan kald\u0131r\u0131lmas\u0131 yoluyla bellek alt sistemlerini birle\u015ftirerek tasar\u0131mlar\u0131 basitle\u015ftirir, sistem g\u00fc\u00e7 t\u00fcketimini \u00f6nemli \u00f6l\u00e7\u00fcde azalt\u0131r ve pil \u00f6mr\u00fcn\u00fc b\u00fcy\u00fck \u00f6l\u00e7\u00fcde uzat\u0131r.<\/span><\/p>\n

    Ki\u015fisel bilgisayar alan\u0131nda, STT-MRAM g\u00fc\u00e7l\u00fc ikame yetenekleri g\u00f6stermektedir. \u0130ster SRAM i\u00e7in y\u00fcksek h\u0131zl\u0131 \u00f6nbellek olarak hizmet versin, ister u\u00e7ucu olmayan \u00f6nbellek olarak flash belle\u011fin yerini als\u0131n, hatta y\u00fcksek h\u0131zl\u0131 program y\u00fcr\u00fctmede PSRAM ve DRAM'in yerine ge\u00e7sin, STT-MRAM performans avantajlar\u0131 sergiler. Dahas\u0131, \u00e7ok say\u0131da g\u00f6m\u00fcl\u00fc uygulamada STT-MRAM yava\u015f yava\u015f NOR flash ve SRAM'in yerini alarak sistem performans\u0131n\u0131 ve g\u00fcvenilirli\u011fini art\u0131rmak i\u00e7in yeni bir se\u00e7enek olarak ortaya \u00e7\u0131kmaktad\u0131r.<\/span><\/p>\n

     <\/p>","protected":false},"excerpt":{"rendered":"

    STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) ikinci nesil MRAM'dir (manyetik rastgele eri\u015fimli bellek). Temel avantaj\u0131, verimli bilgi yaz\u0131m\u0131 elde etmek i\u00e7in spin ak\u0131m\u0131 teknolojisinin kullan\u0131lmas\u0131nda yatmaktad\u0131r. Depolama biriminin temel bile\u015feni, sadece birka\u00e7 nanometre kal\u0131nl\u0131\u011f\u0131nda manyetik olmayan bir izolasyon katman\u0131 ile sandvi\u00e7lenmi\u015f farkl\u0131 kal\u0131nl\u0131klarda iki ferromanyetik katmandan olu\u015fan ince tasarlanm\u0131\u015f bir MTJ'dir (manyetik t\u00fcnel ba\u011flant\u0131s\u0131). Bu benzersiz tasar\u0131m, STT-MRAM'i spin ak\u0131m\u0131n\u0131 hassas bir \u015fekilde kontrol ederek veri yazma i\u015flemlerini ger\u00e7ekle\u015ftiren geli\u015fmi\u015f bir u\u00e7ucu olmayan bellek haline getirmektedir.<\/p>","protected":false},"author":8,"featured_media":2546,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[62],"tags":[275,273,274,247],"acf":[],"_links":{"self":[{"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/posts\/2541"}],"collection":[{"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/users\/8"}],"replies":[{"embeddable":true,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/comments?post=2541"}],"version-history":[{"count":0,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/posts\/2541\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/media\/2546"}],"wp:attachment":[{"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/media?parent=2541"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/categories?post=2541"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.siproin-ic.com\/tr\/wp-json\/wp\/v2\/tags?post=2541"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}