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Características
| Aplicación
|
Especificación del pedido
| Nº de pieza | Paquete | Forma de envasado | Dispositivos por bolsa/bobina |
| SSP7786A-5V | SOP8 | Carrete | 4000PCS |
| SSP7786A-3.3V | SOP8 | Carrete | 4000PCS |
| SSP7786A-2.7V | SOP8 | Carrete | 4000PCS |
Especificación del pedido
| Pin Number | Símbolo | Descripción | Atributo | |
| SOP-8 | DIP-8 | |||
| 1 | 3、5 | NC | No connected. | – |
| 2 | 1 | GND | Ground. | P |
| 3 | 4 | VOUT | LDO output voltage. | O |
| 4 | 2 | VDD | Voltage input supply, used for energy storage. Connect to GND with a capacitor to transfer the input energy for the LDO output stage. | P |
| 5、6、7、8 | 6、7、8 | Drain | Internal power MOSFET drain pin. Provide energy to the backward stage when the input voltage drops to the charging window interval. | P |
Valores máximos absolutos
| Parámetro | Símbolo | Valor | Unidad |
| Drain Voltage | V Drain | 650 | V |
| VDD Supply Voltage | VDD | 9 | V |
| VDD Clamp Current | 10 | mA | |
| VOUT Voltage | VOUT | -0.3~7 | V |
| Package Thermal Resistance (SOP-8) | R ja(SOP8) | 165 | ℃/W |
| Package Thermal Resistance (DIP-8) | R ja(DIP8) | 105 | ℃/W |
| Temperatura máxima de unión | T j | 150 | ℃ |
| Temperatura de funcionamiento | T amb | -40~85 | ℃ |
| Temperatura de almacenamiento | T stg | -65~150 | ℃ |
| Temperatura del plomo (Soldadura, 10seg.) | 260 | ℃ | |
| ESD Capability, HBM (Human Body Model) | HBM | 3 | KV |
| ESD Capability, MM (Machine Model) | MM | 250 | V |
Valores máximos absolutos
| Parámetro | Símbolo | Condiciones de la prueba | Min | Tipo | Max | Unidad |
| High Voltage Startup Section (Drain Pin) | ||||||
| HV Supply Current | I HV | HV=600V, VDD=3V | 5 | 10 | mA | |
| HV Leakage Current | I HV_leakage | HV=600V, VDD=8.5V | 20 | μA | ||
| Power MOSFET Drain Source Breakdown Voltage | VBR | 650 | V | |||
| AC Synchronization Turn-off Voltage | VAC_sync_OFF | 50 | V |
| Supply Voltage Section（VDD Pin） | ||||||
| VDD Operating Current | I VDD_Op | Iout=1mA | 1.4 | mA | ||
| VDD Threshold | VDD_ON | 7.6 | 7.8 | 8 | V | |
| VDD Under Voltage Threshold | VDD_OFF | 1.2 | V | |||
| VDD OVP Threshold | VDD_OVP | 7.6 | 7.8 | 8 | V | |
| VDD OVP Threshold Hysteresis | VDD_OVP_hys | 6.3 | 6.5 | 6.7 | V | |
| VOUT Section (VOUT Pin) | ||||||
| Tensión de salida | VOUT_3.3V | Internal setting | 3.2 | 3.3 | 3.4 | V |
| Tensión de salida | VOUT_2.7V | Internal setting | 2.65 | 2.7 | 2.75 | V |
| Tensión de salida | VOUT_5V | Internal setting | 4.9 | 5 | 5.1 | V |
| Output Current Limit | ILIM | 100 | 138 | 160 | mA | |
| Output Under Voltage Protection | VUVP | 10 | 12.5 | 15 | % | |
| Line Regulation dVout/dVin | ΔVOUT(VIN) | Iout=100μA | 0.2 | %/V | ||
| Ratio de rechazo de la fuente de alimentación | PSRR | Iout=30mA, Cout=4.7μF, f=10Hz to 60KHz | 60 | dB | ||
| Apagado térmico | ||||||
| Thermal Shutdown Threshold | T SD | — | 160 | — | ℃ | |
| Thermal Shutdown Recovery | T RC | 140 | — | ℃ |
Paquete
| Símbolo | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 1.350 | 1.750 | 0.053 | 0.069 |
| A1 | 0.100 | 0.250 | 0.004 | 0.010 |
| A2 | 1.350 | 1.550 | 0.053 | 0.061 |
| b | 0.330 | 0.510 | 0.013 | 0.020 |
| c | 0.170 | 0.250 | 0.006 | 0.010 |
| D | 4.700 | 5.100 | 0.185 | 0.200 |
| E | 3.800 | 4.000 | 0.150 | 0.157 |
| E1 | 5.800 | 6.200 | 0.228 | 0.244 |
| e | 1.270(BSC) | 0.050(BSC) | ||
| L | 0.400 | 1.270 | 0.016 | 0.050 |
| θ | 0° | 8° | 0° | 8° |
Paquete
| Símbolo | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 3.710 | 4.310 | 0.146 | 0.170 |
| A1 | 0.510 | 0.020 | ||
| A2 | 3.200 | 3.600 | 0.126 | 0.142 |
| B | 0.380 | 0.570 | 0.015 | 0.022 |
| B1 | 1.524(BSC) | 0.060(BSC) | ||
| C | 0.204 | 0.360 | 0.008 | 0.014 |
| D | 9.000 | 9.400 | 0.354 | 0.370 |
| E | 6.200 | 6.600 | 0.244 | 0.260 |
| E1 | 7.320 | 7.920 | 0.288 | 0.312 |
| e | 2.540(BSC) | 0.100(BSC) | ||
| L | 3.000 | 3.600 | 0.118 | 0.142 |
| E2 | 8.400 | 9.000 | 0.331 | 0.354 |
| Statement |
