On July 20, 2023, the ” The 2023 World Semiconductor Conference and Nanjing International Semiconductor Expo ” hosted by the Industry and Information Technology of Jiangsu Province and Nanjing Jiangbei New Area Management Committee, and co-organized by the Jiangsu Semiconductor Industry Association, Nanjing Jiangbei New Area Industrial Technology Research and Innovation Park, Nanjing Pukou Economic Development Zone, CCID Consulting Co., Ltd., and Nanjing RoundExpo International Exhibition Co.,Ltd. opened grandly in Nanjing. Shanghai Siproin Microelectronics Co., Ltd. was invited to participate in this conference and won awards for its outstanding technological innovation capabilities and advanced talent training concepts.
With the theme of “Core Ties, New Future”, the conference focuses on the new market, new products and new technologies of the semiconductor industry in view of the core technology and future trends, and is committed to building a high-level “Semiconductor-Specific” exchange platform, excellent technology product display and promotion platform, practical experience sharing platform and supply and demand docking platform, so as to help the coordinated development of China’s semiconductor industry chain from many aspects.
Won the best product in China’s semiconductor market
The conference held the 2022 Excellent Integrated Circuit Product Award Ceremony, and Shanghai Siproin Microelectronics Co., Ltd. won the “2022-2023 China Semiconductor Market Best Product (The Non-volatile Magnetic Memory) Award”.
Traditional storage technologies, such as SRAM, DRAM, and Flash, have indeed achieved remarkable success in the modern electronics industry. However, as the semiconductor manufacturing process approaches the 20nm level, the defects of these traditional technologies are becoming more and more obvious.
The Non-volatile magnetic memory MRAM consists of a MOS tube, a magnetic tunnel junction MTJ and several connecting wires. The manufacturing process is fully compatible with the current integrated circuit process. It has a simple structure, low preparation process cost and strong process scalability. The MRAM process based on 14nm has been mass-produced.
MRAM has the characteristics of non-volatility, extremely high erase and write endurance (1E9~1E14), large capacity, etc., and has low damage rate in reading and writing information, low power consumption, and high speed rate (20ns).
When used as a cache, MRAM has become one of the best candidates for on-chip cache systems due to its high write endurance, natural immunity to soft errors, no backup power supply, high integration density, and non-volatility. MRAM cache has lower dynamic energy consumption and shorter information read latency than SRAM cache of the same capacity.
MRAM has extremely high radiation resistance and can be used in high-performance computers or control systems and data storage systems in harsh environments.
The MRAM capacities currently in mass production and planned for mass production by Siproin include 256Kb, 2Mb, 4Mb, 16Mb, 64Mb, and 256Mb.
